SiSS65DN Description
() at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View -30 0.0046 0.0075 44 -94 a Single.
SiSS65DN Key Features
- TrenchFET® Gen III p-channel power MOSFET
- Industry leadership RDS(on) specifications (as of November 2017)
- 100 % Rg and UIS tested
- Material categorization: