SiSS61DN
SiSS61DN is P-Channel 20V MOSFET manufactured by Vishay.
FEATURES
- Trench FET® Gen III p-channel power MOSFET
- Leadership RDS(on) in pact and thermally enhanced package
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance please see .vishay./doc?99912
APPLICATIONS
- Battery management
- Load switch
D P-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
Power PAK 1212-8S Si SS61DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous source-drain diode current
Single pulse avalanche current Single pulse avalanche energy
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering remendations (peak temperature) c
VDS VGS
IDM IS IAS EAS
TJ, Tstg
LIMIT -20 ±8
-111.9 -89.6 -30.9 b, c -24.7 -200 -54.8 -4.2 b, c -25 31.2 65.8 42.1 5 b, c 3.2 b, c -55 to +150 260
UNIT V
A m J W °C
THERMAL RESISTANCE...
