SiSS61DN Description
() at VGS = -4.5 V RDS(on) max. () at VGS = -2.5 V RDS(on) max. () at VGS = -1.8 V Qg typ.
SiSS61DN Key Features
- TrenchFET® Gen III p-channel power MOSFET
- Leadership RDS(on) in pact and thermally enhanced package
- 100 % Rg and UIS tested