SiSS63DN Description
(Ω) at VGS = -10 V RDS(on) max. (Ω) at VGS = -4.5 V RDS(on) max. (Ω) at VGS = -2.5 V Qg typ.
SiSS63DN Key Features
- TrenchFET® Gen III p-channel power MOSFET
- Leadership RDS(on) in pact and thermally enhanced package
- 100 % Rg and UIS tested