SiSS67DN Description
() at VGS = -10 V RDS(on) max. () at VGS = -4.5 V Qg typ. (nC) ID (A) Configuration 1 4 3 S 2 S S G Bottom View -30 0.0055 0.0093 36 -60 a, g Single.
SiSS67DN Key Features
- TrenchFET® Gen III p-channel power MOSFET
- 100 % Rg and UIS tested
- Very low RDS(on) minimizes power loss from
- Material categorization: for definitions of pliance please see .vishay./doc?99912