SiSS80DN Datasheet | Vishay

FEATURES - Trench FET® Gen IV power MOSFET - Less than 0.92 mΩ in a package footprint of 10.89 mm2 - 2.5 V rated RDS(on) - Optimized Qg, Qgd, and Qgd/Qgs ratio reduce switching related power loss - 100 % Rg and UIS tested - Material categorization: for definitions of pliance please see .vishay./doc?99912 APPLICATIONS - Synchronous rectification - Synchronous buck converter - Battery management - Load switching G N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free Lead (Pb)-free and halogen-free, BLR and IOL Power PAK 1212-8S Si SS80DN-T1-GE3 SISS80DN-T1-UE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering remendations (peak temperature) c VDS VGS IDM IS IAS EAS TJ,...