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SiSS80DN - N-Channel 20V MOSFET

Features

  • TrenchFET® Gen IV power MOSFET.
  • Less than 0.92 mΩ in a package footprint of 10.89 mm2.
  • 2.5 V rated RDS(on).
  • Optimized Qg, Qgd, and Qgd/Qgs ratio reduce switching related power loss.
  • 100 % Rg and UIS tested.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number SiSS80DN
Manufacturer Vishay
File Size 220.46 KB
Description N-Channel 20V MOSFET
Datasheet download datasheet SiSS80DN Datasheet
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Full PDF Text Transcription

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www.vishay.com SiSS80DN Vishay Siliconix N-Channel 20 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V RDS(on) max. (Ω) at VGS = 2.5 V Qg typ. (nC) ID (A) g Configuration 1 4 3 S 2 S S G Bottom View 20 0.00092 0.00115 0.0030 36 210 Single FEATURES • TrenchFET® Gen IV power MOSFET • Less than 0.92 mΩ in a package footprint of 10.89 mm2 • 2.5 V rated RDS(on) • Optimized Qg, Qgd, and Qgd/Qgs ratio reduce switching related power loss • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.
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