SiSS80DN Description
(Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V RDS(on) max. (Ω) at VGS = 2.5 V Qg typ.
SiSS80DN Key Features
- TrenchFET® Gen IV power MOSFET
- Less than 0.92 mΩ in a package footprint of 10.89 mm2
- 2.5 V rated RDS(on)
- Optimized Qg, Qgd, and Qgd/Qgs ratio reduce
- 100 % Rg and UIS tested
- Material categorization: for definitions of pliance