V10D170C - Trench MOS Barrier Schottky Rectifier

Vishay

Key Features

Very low profile - typical height of 1.7 mm Available.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C.
AEC-Q101 qualified available.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

V10D170C trench mos barrier schottky rectifier by Vishay - Datasheet Preview

Datasheet Details

Part number	V10D170C
Manufacturer	Vishay
File Size	106.17 KB
Description	Trench MOS Barrier Schottky Rectifier
Datasheet	V10D170C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com V10D170C Vishay General Semiconductor Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier eSMP® Series K 1 2 Top View Bottom View SMPD (TO-263AC) Anode 1 Anode 2 K Cathodde FEATURES • Very low profile - typical height of 1.7 mm Available • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM 2 x 5.0 A 170 V 100 A VF at IF = 5.0 A (TA = 125 °C) 0.