Si2319CDS Description
Si2319CDS Vishay Siliconix P-Channel 40 V (D-S) MOSFET.
Si2319CDS Key Features
- 4.4 7 nC
- 3.7 Qg (Typ.)
- 40 RDS(on) (Ω) 0.077 at VGS =
- 10 V 0.108 at VGS =
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC