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WEDPN4M72V - 4M x 72 SDRAM

General Description

The 32MByte (256Mb) SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.

Each chip is internally configured as a quad-bank DRAM with a synchronous interface.

Each of the chip’s 16,777,216-bit banks is organized as 4,096 rows by 256 columns by 16 bits.

Key Features

  • S.
  • Package:.
  • 219 Plastic Ball Grid Array (PBGA), 25 x 21mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive edge of system clock cycle Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable Burst length 1,2,4,8 or full page 4096 refresh cycles Commercial, Industrial and Military Temperature Ranges Organized as.

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Datasheet Details

Part number WEDPN4M72V
Manufacturer White Electronic Designs
File Size 489.50 KB
Description 4M x 72 SDRAM
Datasheet download datasheet WEDPN4M72V Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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White Electronic Designs 4Mx72 Synchronous DRAM* FEATURES            Package:  219 Plastic Ball Grid Array (PBGA), 25 x 21mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive edge of system clock cycle Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable Burst length 1,2,4,8 or full page 4096 refresh cycles Commercial, Industrial and Military Temperature Ranges Organized as 4M x 72 Weight: WEDPN4M72V-XBX - 2 grams typical High Frequency = 100, 125MHz WEDPN4M72V-XBX GENERAL DESCRIPTION The 32MByte (256Mb) SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.