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WEDPNF8M722V-XBX - 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip

General Description

The 64MByte (512Mb) SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134, 217, 728 bits.

Each chip is internally configured as a quad-bank DRAM with a synchronous interface.

Key Features

  • S n n Sector Architecture Package:.
  • 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm.
  • One 16KByte, two 8KBytes, one 32KByte, and fifteen 64KBytes in byte mode.
  • One 8K word, two 4K words, one 16K word, and fifteen 32K word sectors in word mode.
  • Any combination of sectors can be concurrently erased. Also supports full chip erase n Boot Code Sector Architecture (Bottom) n Embedded Erase and Program Algorithms n n Commercial, Industrial and Military Temperature Ra.

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Datasheet Details

Part number WEDPNF8M722V-XBX
Manufacturer White Electronic Designs
File Size 1.27 MB
Description 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip
Datasheet download datasheet WEDPNF8M722V-XBX Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com White Electronic Designs WEDPNF8M722V-XBX 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n Sector Architecture Package: • 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm •One 16KByte, two 8KBytes, one 32KByte, and fifteen 64KBytes in byte mode •One 8K word, two 4K words, one 16K word, and fifteen 32K word sectors in word mode. •Any combination of sectors can be concurrently erased. Also supports full chip erase n Boot Code Sector Architecture (Bottom) n Embedded Erase and Program Algorithms n n Commercial, Industrial and Military Temperature Ranges n Weight: • WEDPNF8M722V-XBX - 2.5 grams typical SDRAM PERFORMANCE FEATURES n Organized as 8M x 72 n High Frequency = 100, 125MHz n Single 3.3V ±0.