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WNM6001 - N-Channel MOSFET

Description

The WNM6001 is N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package SOT-23.

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Datasheet Details

Part number WNM6001
Manufacturer Will Semiconductor
File Size 1.28 MB
Description N-Channel MOSFET
Datasheet download datasheet WNM6001 Datasheet

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Full PDF Text Transcription

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WNM6001 Single N-Channel, 60V, 0.50A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNM6001 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNM6001 is Pb-free and Halogen-free. WNM6001 Http//:www.sh-willsemi.com SOT-23 D 3 12 GS Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package SOT-23 Applications  Driver for Relay, Solenoid, Motor, LED etc.
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