GTVA355001EC Description
The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band.
GTVA355001EC Key Features
- GaN on SiC HEMT technology
- Broadband internal input and output matching
- Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle
- Output power at P3dB = 500 W
- Drain efficiency = 65%
- Gain = 13 dB
- Pb-free and RoHS pliant