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GTVA355001EC - Thermally-Enhanced High Power RF GaN on SiC HEMT

Description

The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band.

They feature input and output matching, high efficiency, and a thermally-enhanced packages.

Features

  • GaN on SiC HEMT technology.
  • Broadband internal input and output matching.
  • Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 500 W - Drain efficiency = 65% - Gain = 13 dB.
  • Pb-free and RoHS compliant GTVA355001FC Package H-37248-2 Target RF Characteristics Pulsed CW Specifications (tested in Wolfspeed class AB test fixture) VDD = 50 V, IDQ = 200 mA, POUT = 500 W, ƒ = 3500 MHz, pulse width = 3.

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Datasheet Details

Part number GTVA355001EC
Manufacturer Wolfspeed
File Size 539.28 KB
Description Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet download datasheet GTVA355001EC Datasheet
Additional preview pages of the GTVA355001EC datasheet.

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GTVA355001EC/FC Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 50 V, 2900 – 3500 MHz Description The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band. They feature input and output matching, high efficiency, and a thermally-enhanced packages.
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