GTVA355001FC

Manufacturer: Wolfspeed

GTVA355001FC datasheet by Wolfspeed.

This datasheet includes multiple variants, all published together in a single manufacturer document.

GTVA355001FC Datasheet Details

Part number	GTVA355001FC
Datasheet	GTVA355001FC GTVA355001EC Datasheet (PDF)
File Size	539.28 KB
Manufacturer	Wolfspeed
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT

The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band.

GaN on SiC HEMT technology
Broadband internal input and output matching
Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle
Output power at P3dB = 500 W
Drain efficiency = 65%
Gain = 13 dB
Pb-free and RoHS pliant

Part Number	Description
GTVA355001EC	Thermally-Enhanced High Power RF GaN on SiC HEMT
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GTVA126001FC	Thermally-Enhanced High Power RF GaN HEMT
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