GTVA355001FC Datasheet Thermally-enhanced High Power Rf Gan On Sic Hemt

Manufacturer: Wolfspeed

Overview: GTVA355001EC/FC Thermally-Enhanced High Power RF GaN on SiC HEMT 500 W, 50 V, 2900 – 3500.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	GTVA355001FC
Manufacturer	Wolfspeed
File Size	539.28 KB
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT
Datasheet	GTVA355001FC GTVA355001EC Datasheet (PDF)

The GTVA355001EC and GTVA355001FC are 500-watt GaN on SiC high electron mobility transistors (HEMTs) for use in the 2900 to 3500 MHz frequecy band.

They

GaN on SiC HEMT technology.
Broadband internal input and output matching.
Typical pulsed CW performance (class AB), 3500 MHz, 50 V, 300 µs pulse width, 10% duty cycle - Output power at P3dB = 500 W - Drain efficiency = 65% - Gain = 13 dB.
Pb-free and RoHS compliant GTVA355001FC Package H-37248-2 Target RF Characteristics Pulsed CW Specifications (tested in Wolfspeed class AB test fixture) VDD = 50 V, IDQ = 200 mA, POUT = 500 W, ƒ = 3500 MHz, pulse width = 3.

Part Number	Description
GTVA355001EC	Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA104001FA	High Power RF GaN
GTVA107001EC	High Power RF GaN
GTVA107001FC	High Power RF GaN
GTVA123501FA	Thermally-Enhanced High Power RF GaN
GTVA126001EC	Thermally-Enhanced High Power RF GaN HEMT
GTVA126001FC	Thermally-Enhanced High Power RF GaN HEMT
GTVA261701FA	Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA262701FA	Thermally-Enhanced High Power RF GaN on SiC HEMT
GTVA263202FC	Thermally-Enhanced High Power RF GaN on SiC HEMT