XP10C036LMT
XP10C036LMT is N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
S1 G1 S2 G2
XP10C036L series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
D1 D1 D2 D2
S1
G1 S2
G2
PMPAK® 5x6
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-100
Gate-Source Voltage
+20
+20
ID@TC=25℃
Drain Current, VGS @ 10V
-14.6
ID@TA=25℃ ID@TA=70℃
Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3
-6
-5
Pulsed Drain...
