XP10C150M
XP10C150M is N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
XP10C150 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
100V 150mΩ
2.5A -100V 160mΩ -2.5A
D2
The SO-8 package is widely preferred for all mercial-
G1
G2 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch
S1
S2 applications.
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-100
VGS ID@TA=25℃ ID@TA=70℃
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3
+20
+20
-2.5
-2.0
Pulsed Drain Current1
-10
PD@TA=25℃
Total Power...
