XP10C1K8EU6
XP10C1K8EU6 is N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
XP10C1K8 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH
G1
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1 G2
SOT-363 package is ultra-small surface mount package and lead free Ro HS pliant.
S1
100V 1.8Ω 270m A -100V 3.6Ω -200m A
D2
S2
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-100
VGS ID@TA=25℃ ID@TA=70℃ IDM
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1
+20
+20
-200 m A
-150 m A
-1
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to...
