XP10C1K8EU6 datasheet by YAGEO.
| Part number | XP10C1K8EU6 |
|---|---|
| Datasheet | XP10C1K8EU6-YAGEO.pdf |
| File Size | 188.61 KB |
| Manufacturer | YAGEO |
| Description | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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XP10C1K8 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. N-CH P-CH G1 BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 G2 SOT-363 package is ultra-small surface mount package and lead free RoHS pliant.
| Part Number | Description |
|---|---|
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| XP10C150M | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP10C150MT | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP10C155YT | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP10C036LMT | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP1011ALMT | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP10A035MT | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP10A045YT | Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP10A185M | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| XP10A250MT | DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
