XP10C150MT
XP10C150MT is N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
S1 G1 S2 G2
XP10C150 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3
100V 150mΩ
3.2A -100V 160mΩ -3.2A
D1 D1 D2 D2
The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
S1 G1
S2
G2 PMPAK® 5x6
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-100
Gate-Source Voltage
+20
+20
ID@TA=25℃ ID@TA=70℃
Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3
-3.2
-2.5
Pulsed Drain Current1
-10
PD@TA=25℃...
