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XP10C150MT - N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Datasheet Details

Part number XP10C150MT
Manufacturer YAGEO
File Size 732.09 KB
Description N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Description

S1 G1 S2 G2 XP10C150 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.It provides the designer with an extreme efficient device for use in a wide range of power applications.BVDSS RDS(ON) ID3 BVDSS RDS(ON) ID3 100V 150mΩ 3.2A -100V 160mΩ -3.2A D1 D1 D2 D2 The PMPAK ® 5x6 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve

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