XP10C135M Description
XP10C135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. Units - - 1.3 V - 19 - ns - 15 - nC 2 XP10C135M P-CH @Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min.