Datasheet Details
| Part number | XP10C135M |
|---|---|
| Manufacturer | YAGEO |
| File Size | 277.02 KB |
| Description | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP10C135M-YAGEO.pdf |
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Overview: XP10C135M Halogen-Free Product N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching Performance D2 D2 D1 D1 ▼ RoHS Compliant & Halogen-Free SO-8 G2 S2 G1.
| Part number | XP10C135M |
|---|---|
| Manufacturer | YAGEO |
| File Size | 277.02 KB |
| Description | N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Datasheet | XP10C135M-YAGEO.pdf |
|
|
|
XP10C135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance.
It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 100V 135mΩ 3.2A -100V 155mΩ -3.2A D2 The SO-8 package is widely preferred for all commercial- G1 G2 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch S1 S2 applications.
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