XP10C135M
XP10C135M is N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
XP10C135 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
N-CH P-CH
BVDSS RDS(ON) ID BVDSS RDS(ON) ID
D1
100V 135mΩ
3.2A -100V 155mΩ -3.2A
D2
The SO-8 package is widely preferred for all mercial-
G1
G2 industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch
S1
S2 applications.
Absolute Maximum Ratings@Tj=25o C(unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-100
VGS ID@TA=25℃ ID@TA=70℃
Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3
+20
+20
-3.2
-2.5
IDM PD@TA=25℃
Pulsed Drain Current1 Total Power Dissipation4
-10
TSTG
Storage Temperature...
