XP10C155YT
XP10C155YT is N- & P-CHANNEL ENHANCEMENT MODE POWER MOSFET manufactured by YAGEO.
Description
PMPAK® 3x3
P-CH
XP10C155 series are innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme G1 efficient device for use in a wide range of power applications.
The PMPAK ® 3x3 package is special for voltage conversion application using standard infrared reflow technique with the backside heat sink to achieve the good thermal performance.
BVDSS RDS(ON) BVDSS RDS(ON)
D1
G2 S1
100V 155mΩ -100V 285mΩ
D2
S2
Absolute Maximum Ratings@Tj=25o C. (unless otherwise specified)
Symbol
Parameter
Rating
Units
N-channel P-channel
Drain-Source Voltage
-100
Gate-Source Voltage
+20
+20
ID@TC=25℃
Drain Current, VGS @ 10V
-5.2
ID@TC=100℃ ID@TA=25℃
Drain Current, VGS @ 10V Drain Current3, VGS @ 10V
-3.3
-2
ID@TA=70℃...
