FXT614
FXT614 is NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR manufactured by Zetex Semiconductors.
FEATURES
- 100 Volt VCEO
- 800 m A continuous current
- Gain of 10K at IC=500m A
- Ptot= 1 Watt APPLICATIONS
- Lamp, solenoid and relay drivers REFER TO BCX38 FOR GRAPHS
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ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg 120 100 10 800 1
E-line TO92 patible VALUE UNIT V V V m A W °C
-55 to +200
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL V(BR)CBO MIN. 120 TYP. MAX. UNIT V V V 100 100 1.25 1.8 5000 10000 n A n A V V CONDITIONS. IC=10µ A, IE=0 IC=10m A, IB=0- IE=10µ A, IC=0 VCB=60V, IE=0 VEB=8V, IC=0 IC=800m A, IB=8m A- IC=800m A, VCE=5V- IC=100m A, VCE=5V- IC=500m A, VCE=5V-
VCEO(SUS) 100 V(BR)EBO ICBO 10
Emitter Cut-Off Current IEBO Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage VCE(sat) VBE(on)
Static Forward Current h FE Transfer Ratio
- Measured under pulsed conditions. Pulse Width=300µs. Duty cycle...
