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FXT614 - NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR

Key Features

  • 100 Volt VCEO.
  • 800 mA continuous current.
  • Gain of 10K at IC=500mA.
  • Ptot= 1 Watt.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 – FEB 94 FEATURES * 100 Volt VCEO * 800 mA continuous current * Gain of 10K at IC=500mA * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers REFER TO BCX38 FOR GRAPHS www.DataSheet4U.com FXT614 B C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IC Ptot Tj:Tstg 120 100 10 800 1 E-line TO92 Compatible VALUE UNIT V V V mA W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).