FXT655 Datasheet | Zetex Semiconductors

FEATURES - 150 Volt VCEO - 1 Amp continuous current - Low saturation voltage - Ptot= 1 Watt REFER TO ZTX655 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipationat Tamb =25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 patible VALUE 150 150 5 2 1 1 -55 to +200 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 150 150 5 100 100 0.5 0.5 1.1 1 50 50 20 30 20 MHz p F TYP. MAX. UNIT V V V n A n A V V V V CONDITIONS. IC=100µ A, IE=0 IC=10m A, IB=0- IE=100µ A, IC=0 VCB=125V, IE=0 VEB=3V, IC=0 IC=500m A, IB=50m A- IC=1A, IB=200m A- IC=500m A, IB=50m A- IC=500m A, VCE=5V- IC=10m A, VCE=5V IC=500m A, VCE=5V- IC=1A, VCE=5V- IC=10m A, VCE=20V f=20MHz VCB=20V, f=1MHz Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) Static Forward Current h FE Transfer Ratio Transition Frequency Output Capacitance f T Cobo - Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%...