FXT618 Datasheet | Zetex Semiconductors

FEATURES - 10A Peak pulse current - Excellent h FE characteristics up to10A (pulsed) - Extremely low saturation voltage e.g. 7m V typ. - IC cont 3.5A APPLICATIONS - Power MOSFET gate driver in conjunction with plementary ZTX718 .. ZTX618 E-Line TO92 patible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Practical Power Dissipation- Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptotp Ptot Tj:Tstg VALUE 20 20 5 10 3.5 500 1.5 1 -55 to +200 UNIT V V V A A m A W W °C - Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX618 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 7 80 210 0.93 0.86 200 300 170 40 100 400 450 300 85 140 23 170 400 30 MHz p F ns ns MIN. 20 20 5 TYP. 100 27 8.3 100 100 100 15 150 255 1.05 1.0 MAX. UNIT V V V n A n A n A m V m V m V V V CONDITIONS. IC=100µ A IC=10m A- IE=100µ A VCB=16V VEB=4V VCES=16V IC=0.1A, IB=10m A- IC=1A, IB=10m A- IC=3.5A, IB=50m A- IC=3.5A, IB=50m A- IC=3.5A, VCE=2V- IC=10m A, VCE=2V- IC=200m A, VCE=2V- IC=3A, VCE=2V- IC=10A, VCE=2V- IC=50m A, VCE=10V f=100MHz VCB=10V, f=1MHz VCC=10V, IC=1A IB1=-IB2=10m A VBE(sat) VBE(on) h FE f T Cobo t(on) t(off) - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ZTX618 TYPICAL CHARACTERISTICS 0.4 25°C 0.4 I+/I- =50 0.3 I+/I- =100 I+/I- =50 I+/I- =10 0.3 100°C 0.2 0.1 25°C -55°C 0.1 0 1m A 10m A 100m A 1A 10A 1m A 10m...