FXT618 Description
NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 JULY 1995.
FXT618 Key Features
- 10A Peak pulse current
- Excellent hFE characteristics up to10A (pulsed)
- Extremely low saturation voltage e.g. 7mV typ
- IC cont 3.5A
FXT618 Applications
- Power MOSFET gate driver in conjunction with plementary ZTX718