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FXT618 - NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Features

  • 10A Peak pulse current.
  • Excellent hFE characteristics up to10A (pulsed).
  • Extremely low saturation voltage e. g. 7mV typ.
  • IC cont 3.5A.

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Datasheet preview – FXT618

Datasheet Details

Part number FXT618
Manufacturer Zetex Semiconductors
File Size 182.06 KB
Description NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Datasheet download datasheet FXT618 Datasheet
Additional preview pages of the FXT618 datasheet.

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Full PDF Text Transcription

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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 – JULY 1995 FEATURES * 10A Peak pulse current * Excellent hFE characteristics up to10A (pulsed) * Extremely low saturation voltage e.g. 7mV typ. * IC cont 3.5A APPLICATIONS * Power MOSFET gate driver in conjunction with complementary ZTX718 www.DataSheet4U.com ZTX618 C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Practical Power Dissipation* Power Dissipation Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC IB Ptotp Ptot Tj:Tstg VALUE 20 20 5 10 3.5 500 1.5 1 -55 to +200 UNIT V V V A A mA W W °C * Device mounted on P.C.B. with copper equal to 1 sq.
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