FXT657
FXT657 is NPN SILICON PLANAR MEDIUM POWER TRANSISTOR manufactured by Zetex Semiconductors.
FEATURES
- 300 Volt VCEO
- 0.5 Amps continuous current
- Ptot= 1 Watt APPLICATIONS
- Telephone dialler circuits
- Video output drivers REFER TO ZTX657 FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg
E-Line TO92 patible VALUE 300 300 5 1 0.5 1 -55 to +200 UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 300 300 5 100 100 0.5 1 1 40 50 30 20 MHz p F TYP. MAX. UNIT V V V n A n A V V V CONDITIONS. IC=100µ A, IE=0 IC=10m A, , IB=0- IE=100µ A, IC=0 VCB=200V, IE=0 VEB=3V, IC=0 IC=100m A, IB=10m A- IC=100m A, IB=10m A- IC=100m A, VCE=5V- IC=10m A, VCE=5V- IC=100m A, VCE=5V- IC=10m A, VCE=20V f=20MHz VCB=20V, f=1MHz
Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on)
Static Forward Current h FE Transfer Ratio Transition Frequency Output Capacitance f T Cobo
- Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%...
