• Part: FXT690B
  • Description: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
  • Category: Transistor
  • Manufacturer: Zetex Semiconductors
  • Size: 76.48 KB
Download FXT690B Datasheet PDF
Zetex Semiconductors
FXT690B
FXT690B is NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR manufactured by Zetex Semiconductors.
FEATURES - 45 Volt VCEO - Gain of 400 at IC=1 Amp - Very low saturation voltage APPLICATIONS - Darlington replacement - Siren Drivers - Battery powered circuits - Motor drivers REFER TO ZTX690B FOR GRAPHS .. E-Line TO92 patible ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Practical Power Dissipation- Power Dissipation at Tamb=25°C derate above 25°C SYMBOL VCBO VCEO VEBO ICM IC Ptotp Ptot Tj:Tstg VALUE 45 45 5 6 2 1.5 1 5.7 -55 to +200 UNIT V V V A A W W m W/°C °C Operating and Storage Temperature Range - The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 1 inch square minimum ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(sat) VBE(on) h FE 500 400 150 3-52 MIN. 45 45 5 0.1 0.1 0.1 0.5 0.9 0.9 TYP. MAX. UNIT V V V µA µA CONDITIONS. IC=100µA IC=10m A- IE=100µA VCB=35V VEB=4V IC=0.1A, IB=0.5m A- IC=1A, IB=5m A- IC=1A, IB=10m A- IC=1A, VCE=2V- IC=100m A, VCE=2V- IC=1A, VCE=2V- IC=2A, VCE=2V- ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Transition Frequency Input Capacitance Output Capacitance Switching Times SYMBOL f T Cibo Cobo ton toff MIN. 150 200 16 33 1300 TYP. MAX. UNIT MHz p F p F ns ns CONDITIONS. IC=50m A, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=500m A, IB!=50m A IB2=50m A, VCC=10V - Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient1 Junction to Ambient2 Junction to Case SYMBOL Rth(j-amb)1 Rth(j-amb)2†...