FXT653 Datasheet | Zetex Semiconductors

FEATURES - 100 Volt VCEO - 2 Amps continuous current - Low saturation voltage - Ptot= 1 Watt REFER TO ZTX653 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 patible VALUE 120 100 5 6 2 1 -55 to +200 UNIT V V V A A W °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 120 100 5 0.1 10 0.1 0.13 0.23 0.9 0.8 70 100 55 25 140 200 200 110 55 175 30 0.3 0.5 1.25 1 300 MHz p F TYP. MAX. UNIT V V V µA µA µA CONDITIONS. IC=100µ A, IE=0 IC=10m A, IB=0- IE=100µ A, IC=0 VCB=100V, IE=0 VCB=100V,T amb =100°C VEB=4V, IC=0 IC=1A, IB=100m A- IC=2A, IB=200m A- IC=1A, IB=100m A- IC=1A, VCE=2V- IC=50m A, VCE=2V- IC=500m A, VCE=2V- IC=1A, VCE=2V- IC=2A, VCE=2V- IC=100m A, VCE=5V f=100MHz VCB=10V, f=1MHz Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) Static Forward Current h FE Transfer Ratio Transition Frequency Output Capacitance f T Cobo - Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%...