CSD88537ND Overview
This dual SO-8, 60 V, 12.5 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in low current motor control applications. Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 60 14 2.3 VGS = 6 V VGS = 10 V 3.0 15 12.5 UNIT V nC nC mΩ mΩ V . Ordering Information(1) Device...
CSD88537ND Key Features
- 1 Ultra-Low Qg and Qgd
- Avalanche Rated
- Pb Free
- RoHS pliant
- Halogen Free
CSD88537ND Applications
- Half Bridge for Motor Control