Datasheet Details
| Part number | CSD88539ND |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 543.79 KB |
| Description | 60V Dual N-Channel Power MOSFET |
| Datasheet | CSD88539ND-etcTI.pdf |
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Overview: CSD88539ND SLPS456 – FEBRUARY 2014 CSD88539ND, Dual 60 V N-Channel NexFET™ Power MOSFETs.
| Part number | CSD88539ND |
|---|---|
| Manufacturer | Texas Instruments |
| File Size | 543.79 KB |
| Description | 60V Dual N-Channel Power MOSFET |
| Datasheet | CSD88539ND-etcTI.pdf |
|
|
|
This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurrent motor control applications.
Top View 1 S1 2 G1 3 S2 4 G2 8 D1 7 D1 6 D2 5 D2 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 60 7.2 1.1 VGS = 6 V 27 VGS = 10 V 23 3.0 UNIT V nC nC mΩ mΩ V Device CSD88539ND CSD88539NDT Ordering Information Qty Media Package 2500 250 13-Inch Reel 7-Inch Reel SO-8 Plastic Package Ship Tape and Reel Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 60 ±20 15 UNIT V V ID Continuous Drain Current (Silicon limited), TC = 25°C 11.7 A Continuous Drain Current(1) 6.3 IDM Pulsed Drain Current (2) PD Power Dissipation(1) 46 A 2.1 W TJ, Operating Junction and Storage TSTG Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse ID = 22 A, L = 0.1 mH, RG = 25 Ω 24 mJ (1) Typical RθJA = 60°C/W on a 1-inch2, 2-oz.
Cu pad on a 0.06inch thick FR4 PCB (2) Pulse duration ≤ 300 μs, duty cycle ≤ 2% RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 60 54 TC = 25°C,I D = 5A TC = 125°C,I D = 5A 48 42 36 30 24 18 12 6 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G001 Gate Charge 10 9 ID = 5A VDS = 30V 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 Qg - Gate Charge (nC) G001 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual
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