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CSD88539ND
SLPS456 – FEBRUARY 2014
CSD88539ND, Dual 60 V N-Channel NexFET™ Power MOSFETs
1 Features
•1 Ultra-Low Qg and Qgd • Avalanche Rated • Pb Free • RoHS Compliant • Halogen Free
2 Applications
• Half Bridge for Motor Control • Synchronous Buck Converter
3 Description
This dual SO-8, 60 V, 23 mΩ NexFET™ power MOSFET is designed to serve as a half bridge in lowcurrent motor control applications.
Top View
1 S1
2 G1
3 S2
4 G2
8 D1
7 D1
6 D2
5 D2
Product Summary
TA = 25°C
VDS
Drain-to-Source Voltage
Qg
Gate Charge Total (10 V)
Qgd
Gate Charge Gate to Drain
RDS(on) Drain-to-Source On Resistance
VGS(th) Threshold Voltage
TYPICAL VALUE
60
7.2
1.1
VGS = 6 V
27
VGS = 10 V
23
3.
CSD88539ND Datasheet
