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74AUP1G38 - Low-power 2-input NAND gate

General Description

The 74AUP1G38 is a single 2-input NAND gate with open-drain output.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

Key Features

  • Wide supply voltage range from 0.8 V to 3.6 V.
  • CMOS low power dissipation.
  • High noise immunity.
  • Complies with JEDEC standards:.
  • JESD8-12 (0.8 V to 1.3 V).
  • JESD8-11 (0.9 V to 1.65 V).
  • JESD8-7 (1.65 V to 1.95 V).
  • JESD8-5 (2.3 V to 2.7 V).
  • JESD8C (2.7 V to 3.6 V).
  • ESD protection:.
  • HBM JESD22-A114F Class 3A exceeds 5000 V.
  • MM JESD22-A115-A exceeds 200 V.
  • CDM JESD22-C101E exceeds 1000.

📥 Download Datasheet

Datasheet Details

Part number 74AUP1G38
Manufacturer Nexperia
File Size 265.12 KB
Description Low-power 2-input NAND gate
Datasheet download datasheet 74AUP1G38 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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74AUP1G38 Low-power 2-input NAND gate (open drain) Rev. 9 — 16 August 2022 Product data sheet 1. General description The 74AUP1G38 is a single 2-input NAND gate with open-drain output. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down. 2. Features and benefits • Wide supply voltage range from 0.8 V to 3.6 V • CMOS low power dissipation • High noise immunity • Complies with JEDEC standards: • JESD8-12 (0.8 V to 1.