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BAS21GW - High-voltage switching diode

General Description

High-voltage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package.

2.

Key Features

  • High switching speed: trr ≤ 50 ns.
  • Low leakage current: IR ≤ 100 nA.
  • High reverse voltage VR ≤ 200 V.
  • Low capacitance: Cd ≤ 2 pF.
  • Small SMD plastic package.
  • AEC-Q101 qualified 3.

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Datasheet Details

Part number BAS21GW
Manufacturer Nexperia
File Size 195.69 KB
Description High-voltage switching diode
Datasheet download datasheet BAS21GW Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BAS21GW High-voltage switching diode 15 June 2017 Product data sheet 1. General description High-voltage switching diode, encapsulated in an SOD123 small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage VR ≤ 200 V • Low capacitance: Cd ≤ 2 pF • Small SMD plastic package • AEC-Q101 qualified 3. Applications • High-speed switching • General-purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter IF forward current VR reverse voltage VF forward voltage IR reverse current trr reverse recovery time Conditions Tj = 25 °C IF = 200 mA; tp ≤ 300 µs; δ ≤ 0.