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GAN3R2-100CBE - GaN FET

Datasheet Summary

Description

The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP).

It is a normally-off e-mode device offering superior performance.

2.

Features

  • Enhancement mode - normally-off power switch.
  • Ultra high frequency switching capability.
  • No body diode.
  • Low gate charge, low output charge.
  • Qualified for standard.

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Datasheet preview – GAN3R2-100CBE

Datasheet Details

Part number GAN3R2-100CBE
Manufacturer nexperia
File Size 286.48 KB
Description GaN FET
Datasheet download datasheet GAN3R2-100CBE Datasheet
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WLCSP8 GAN3R2-100CBE 100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) 27 April 2023 Product data sheet 1. General description The GAN3R2-100CBE is a a general purpose 100 V, 3.2 mΩ Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • ESD protection • RoHS, Pb-free, REACH-compliant • High efficiency and high power density • Wafer Level Chip-Scale Package (WLCSP) 3.5 mm x 2.13 mm 3.
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