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GAN7R0-150LBE - GaN FET

Datasheet Summary

Description

The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package.

It is a normally-off e-mode device offering superior performance.

2.

Features

  • Enhancement mode - normally-off power switch.
  • Ultra high frequency switching capability.
  • No body diode.
  • Low gate charge, low output charge.
  • Qualified for standard.

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Datasheet Details

Part number GAN7R0-150LBE
Manufacturer nexperia
File Size 262.81 KB
Description GaN FET
Datasheet download datasheet GAN7R0-150LBE Datasheet
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FCLGA GAN7R0-150LBE 150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package 24 April 2023 Product data sheet 1. General description The GAN7R0-150LBE is a general purpose 150 V, 7 mΩ Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package. It is a normally-off e-mode device offering superior performance. 2. Features and benefits • Enhancement mode - normally-off power switch • Ultra high frequency switching capability • No body diode • Low gate charge, low output charge • Qualified for standard applications • ESD protection • RoHS, Pb-free, REACH-compliant • High efficiency and high power density • Land Grid Array (LGA) package 2.2 mm x 3.2 mm x 0.774 mm 3.
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