NGW60T65M3DFP Overview
The NGW60T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It bines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a shortcircuit withstand time of 5 μs.
NGW60T65M3DFP Key Features
- Device current is rated at 60 A
- Low conduction and switching losses
- Stable and tight parameters for easy parallel operation
- Maximum junction temperature 175 °C
- Fully rated and fast reverse recovery diode
- 5 μs short circuit withstand time
- HV-H3TRB qualified