onsemi 2N6059
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
| Part No. | 2N6059 |
|---|---|
| Datasheet | 2N6059 Download |
| Manufacturer |  onsemi |
| Description | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS |
| Buy | Stock & Price |
MAXIMUM RATINGS
(1) Rating Symbol VCEO VCB VEB IC IB 2N6058 80 80 2N6052 2N6059 100 100 Unit Vdc Vdc Vdc Adc Adc Collector−Emitter Voltage Collector−Base Voltage Emitter−Base voltage 5.0 12 20 Collector Current — Continuous Peak Base Current Total Device Dissipation @TC = 25_C Derate above 25_C 0.2 PD 150 Watts W/_C _C 0.857 Operating and Storage Junction Temperature Range TJ, Tstg – 65 to + 200_C These devices are available in Pb−free package(s). Specifications herein apply to both standard and Pb−free devices. Please see our website at for specific Pb−free orderable part numbers, or contact your local ON Semiconductor sales office or representative. DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80 − 100 VOLTS 150 WATTS CASE 1−07 TO−204AA (TO−3) THERMAL CHARACTERISTICS Characteristic Symbol RθJC Rating 1.17 Unit Thermal Resistance, Junction to Case _C/W (1) Indicates JEDEC Registered Data. 160 PD, POWER DISSIPATION (WATTS) 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) 175 200 Figure 1.
