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2N6059 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

This page provides the datasheet information for the 2N6059, a member of the 2N6050 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS family.

Datasheet Summary

Description

The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

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Datasheet Details

Part number 2N6059
Manufacturer Central Semiconductor
File Size 257.33 KB
Description COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Datasheet download datasheet 2N6059 Datasheet
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Other Datasheets by Central Semiconductor
  • 2N6050 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
  • 2N6051 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
  • 2N6052 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
  • 2N6053 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
  • 2N6054 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
  • 2N6055 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
  • 2N6056 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
  • 2N6057 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

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2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC ICM IB PD TJ, Tstg JC 2N6050 2N6057 60 60 2N6051 2N6058 80 80 5.0 12 20 0.2 150 -65 to +200 1.
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