Datasheet Details
| Part number | PE30P80K |
|---|---|
| Manufacturer | semi one |
| File Size | 933.87 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 PE30P80K Datasheet
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General Description
The PE30P80K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =-30V,ID =-80A RDS(ON) < 5.5mΩ @ VGS=-10V D G S Schematic diagram.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability.