PE30P80K Datasheet | semi one

P-Channel Enhancement Mode Power MOSFET Description The PE30P80K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =-30V,ID =-80A RDS(ON) < 5.5mΩ @ VGS=-10V S Schematic diagram - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability Application - Battery and loading switching Marking and pin assignment TO-252 -2Ltop...