PE4946 Datasheet | semi one

N-Channel Enhancement Mode Power MOSFET Description The PE4946 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =60V,ID =4.5A RDS(ON) < 45mΩ @ VGS=10V （Typ：38mΩ） Schematic diagram - High density cell design for ultra low Rdson - Fully characterized avalanche voltage and current - Low gate to drain charge to reduce switching losses Application - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply Marking and pin assignment SOP-8 top...