| Part Number | 2SD1409 Datasheet |
|---|---|
| Manufacturer | Toshiba |
| Overview | : SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES . High DC Current Gain : hFE=600(Min. ) ( V CE=2V, I C=2A) . Monolithic Const. . High DC Current Gain : hFE=600(Min. ) ( V CE=2V, I C=2A) . Monolithic Construction with Built-in 3ase-Emitter Shunt Resistor. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO RATING 600 400 UNIT V V INDUSTRIAL APPLICATIONS Unit in mm . |
2SD1409 Datasheet and Specifications PDF
The 2SD1409 is a Silicon NPN Transistor.
Key Specifications
| Part Number | 2SD1409 Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220Fa package ·High DC current gain ·DARLINGTON APPLICATIONS ·Igniter applications ·High volitage switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum. cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IC=10mA; IB=0 IC=4A ;IB=0.04A IC=4A ;IB=0.04A IE=4A; IB=0 VCB=600V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V f=1MHz ; VCB=50V;IE=0 600 100 35 pF MIN 400 2.0 2.5 3.0 0.5 3 TYP. MAX . |
| Part Number | 2SD1409 Datasheet |
|---|---|
| Description | NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : hFE= 600(Min) @ IC= 2A, VCE= 2V ·Minimum Lot-to-Lot variations for robust device performance and reliable opera. (BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 400 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA 2.5 V VECF C-E Diode Forward Voltage IF= 4A 3.0 V ICBO Collector Cutoff Current VCB= 600V. |