| Part Number | 4N60A Datasheet |
|---|---|
| Manufacturer | Nell Power Semiconductor |
| Overview | The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage o. RDS(ON) = 2.5Ω@VGS = 10V Ultra low gate charge(20nC max.) Low reverse transfer capacitance (CRSS = 8pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D G DS TO-251 (I-PAK) (4N60F) D D G S TO-252 (D-PAK) (4N60G) GDS TO-220AB. |
4N60A Datasheet PDF
The 4N60A is a N-Channel Power MOSFET.
| Part Number | 4N60A Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | GOFORD |
| Overview |
GOFORD
Features
600V, 4A RDS(ON) = 2.0 Ω (Typ.) @ VGS = 10V Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant
Package
TO-252
G54NN6600K
Application
High freq.
* 600V, 4A * RDS(ON) = 2.0 Ω (Typ.) @ VGS = 10V * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS Compliant Package TO-252 G54NN6600K Application * High frequency switching mode power supply * Uninterruptible Power Supply (UPS) * Electronic ballast Ordering Information Pa. |