BF998W Datasheet
BF998W Datasheet (Infineon)
Infineon
BF998... Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive devi.
kdown voltage ID = 10 µA, VG1S = -4 V, VG2S = -4 V Gate 1 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate 1 source leakage current ±V G1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ±V G2S = 5 V, VG2S = VDS = 0 Drain cu.
BF998W Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
BF 998W Silicon N-Channel MOSFET Tetrode • Short-channel transistor with high S/C quality factor • For low noise, gain-controlled input stages up to 1 GHz Reverse pinout version of BF998 ESD: Electro.
.