| Part Number | BSS63 |
|---|---|
| Manufacturer | Nexperia |
| Overview |
PNP high-voltage transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Low current (max. 100 mA) • High voltage (max. 100 V)
3. Applications
• Hig.
and benefits
* Low current (max. 100 mA) * High voltage (max. 100 V) 3. Applications * High-voltage general purpose * Switching applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current hFE DC current gain Cond. |
BSS63 Datasheet
The BSS63 is a PNP high-voltage transistor.
| Part Number | BSS63 |
|---|---|
| Description | PNP General Purpose Amplifier |
| Manufacturer | Fairchild Semiconductor |
| Overview | This device is designed for general-purpose amplifier and switch applications requiring high voltages. Sourced from process 74. C SOT-23 Mark: T3 E B Ordering Information Part Number BSS63 Markin. torage Temperature Range -100 -110 -6 -200 -55 to +150 V V V mA °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. © 1997 Fai. |
| Part Number | BSS63 |
|---|---|
| Description | PNP General Purpose Amplifier |
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type Transistors PNP General Purpose Amplifier BSS63 Features PNP general purpose amplifier +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximu. PNP general purpose amplifier +0.1 2.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1 2 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Junction temperature Storage temperature Total device. |
| Part Number | BSS63 |
|---|---|
| Description | SMALL SIGNAL PNP TRANSISTOR |
| Manufacturer | STMicroelectronics |
| Overview | BSS63 SMALL SIGNAL PNP TRANSISTOR Type BSS63 s Marking T3 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE LOW. ameter Collector Cut-off Current (IE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CB = -90 V V CB = -90 V V EB = -5 V I C = -10 µ A -110 T j = 150 o C Min. Typ . Max. -100 -50 -200 Un it nA µA nA V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter . |