| Part Number | BUZ30A |
|---|---|
| Manufacturer | Infineon |
| Overview | BUZ 30A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 30A 200 V 21 A 0.13 Ω TO-220. Symbol min. Values typ. max. Unit Static Characteristics Drain- source breakdown voltage V(BR)DSS 200 - V VGS = 0 V, ID = 0.25 mA, Tj = 25 ˚C Gate threshold voltage VGS(th) 2.1 3 4 µA 0.1 10 1 100 nA 10 100 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS VDS = 200 V, VGS = 0 V, . |
BUZ30A Datasheet
The BUZ30A is a Power Transistor.
| Part Number | BUZ30A |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel Mosfet Transistor
·FEATURES ·Static Drain-Source On-Resistance
: RDS(on) = 0.13Ω(Max) ·High current capability ·150℃ operating temperature ·High speed switching ·Minimum Lot-to-Lot vari.
*Static Drain-Source On-Resistance : RDS(on) = 0.13Ω(Max) *High current capability *150℃ operating temperature *High speed switching *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *High current , high speed switching *Solenoid and relay drivers *DC-D. |
| Part Number | BUZ30A |
|---|---|
| Description | Power Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | BUZ 30A SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 30A VDS 200 V ID 21 A RDS(on) 0.13 Ω Package TO-220 AB Ordering Code C670. min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 200 3 0.1 10 10 0.1 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 200 V, VGS = 0 V, Tj = 25 °C VDS =. |