IRF3707ZS Datasheet and Specifications PDF

Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET IRF3707Z IRF3707ZS IRF3707ZL Qg 9.7nC PD - 95812A VDSS RDS(on) max 30V 9.5m: Benefits l.

n-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient Typ. Max. 2.653
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* 62 40 Units °C/W eà e
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* 0.50
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* Junction-to-Ambient (PCB Mount) h Notes  through ‡ are on page 12 1 12/4/03 IRF3707Z/S/L Static @ TJ = 25°C (unless otherwi.

·Drain Current :ID= 59A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High Fr.

Breakdown Voltage VGS= 0; ID= 250µA 30 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 1.35 2.25 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=21A 9.5 mΩ IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 24V; VGS= 0;Tj =25℃ V.