| Part Number | MMBT4401 Datasheet |
|---|---|
| Manufacturer | EVVO |
| Overview |
MMBT4401
MMBT4401 NPN TRANSISTOR
FEATURES • Switching Transistor
MAXIMUM RATINGS (Ta=25℃ unless other wise noted)
Parameter Collector–Base Voltage Collector–Emitter Voltage Emitter–Base Voltage Col.
* Switching Transistor MAXIMUM RATINGS (Ta=25℃ unless other wise noted) Parameter Collector *Base Voltage Collector *Emitter Voltage Emitter *Base Voltage Collector Current * Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Symbol VCBO VCEO VEBO IC PC RthJA Value 6. |
MMBT4401 Datasheet and Specifications PDF
The MMBT4401 is a NPN TRANSISTOR.
| Part Number | MMBT4401 Datasheet |
|---|---|
| Description | NPN Transistors |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
Transistors
NPN Transistors MMBT4401 (KMBT4401)
■ Features
● Ideal for Medium Power Amplification and Switching ● Complementary PNP Type Available (MMBT4403)
+ 2.4 0 .1 - 0.1
SOT-23
2.9 +.
* Ideal for Medium Power Amplification and Switching * Complementary PNP Type Available (MMBT4403) + 2.4 0 .1 - 0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 1 2 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.1 1.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.1 0.97 - 0.1 * Absolute Maximum Ratings Ta = 25℃ Para. |
| Part Number | MMBT4401 Datasheet |
|---|---|
| Description | NPN Silicon Epitaxial Planar Transistor |
| Manufacturer | Galaxy Microelectronics |
| Overview |
Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
Epitaxial planar die construction. Complementary PNP type available:
Pb
Lead-free
MMBT4403.
Ideal for medium power .
* Epitaxial planar die construction. * Complementary PNP type available: Pb Lead-free MMBT4403. * Ideal for medium power amplification and switching. * MSL 1 APPLICATIONS * General purpose application, switching application. MMBT4401 SOT-23 ORDERING INFORMATION Type No. Marking MMBT4401 2. |
| Part Number | MMBT4401 Datasheet |
|---|---|
| Description | NPN General Purpose Amplifier |
| Manufacturer | Fairchild Semiconductor |
| Overview | This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. November 2014 EBC TO-92 Figure 1. 2N4401 Device Package C SOT-23 Mark:2X E B F. ot recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VCEO VCBO VEBO IC TJ, TSTG Coll. |