| Part Number | MTP3055 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview | ® MTP3055E N - CHANNEL 60V - 0.1Ω - 12A TO-220 STripFET™ MOSFET T YPE MTP3055E s s s s s V DSS 60 V R DS(on) < 0.15 Ω ID 12 A TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE T. dth limited by safe operating area First digit of the datecode being Z or K identifies silicon characterized in this datasheet. July 1999 1/8 MTP3055E THERMAL DATA R thj -case R thj -amb R t hc-s Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Ca. |
MTP3055 Datasheet and Specifications PDF
The MTP3055 is a N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET.
| Part Number | MTP3055 Datasheet |
|---|---|
| Description | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP3055V/D
TMOS Power Field Effect Transistor
TMOS V is a new technology designed to achieve an on–resistance area product ab.
of TMOS V * On *resistance Area Product about One *half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology * Faster Switching than E *FET Predecessors Features Common to TMOS V and TMOS E *FETS * Avalanche Energy Specified * IDSS and VDS(on) Specified at Elevated Temperature * Static . |