| Part Number | SI2304DS Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type N-Channel Enhancement MOSFET SI2304DS (KI2304DS) MOSFET Ƶ Features ƽ VDS (V) = 30V ƽ RDS(ON) ˘ 117m¡ (VGS = 10V) ƽ RDS(ON) ˘ 190m¡ (VGS = 4.5V) G1 S2 3D 627 . ƽ VDS (V) = 30V ƽ RDS(ON) ˘ 117m¡ (VGS = 10V) ƽ RDS(ON) ˘ 190m¡ (VGS = 4.5V) G1 S2 3D 627 3 1 2 8QLW PP *DWH 6RXUFH 'UDLQ Ƶ Absolu. |
SI2304DS Datasheet and Specifications PDF
The SI2304DS is a N-Channel Enhancement MOSFET.
| Part Number | SI2304DS Datasheet |
|---|---|
| Description | N-channel FET |
| Manufacturer | NXP Semiconductors |
| Overview | N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology Product availability: SI2304DS in SOT23. 2. Features s TrenchMOS™ technology s Very fast switching . s TrenchMOS™ technology s Very fast switching s Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Low power DC to DC converter. 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT23, simplified outline and symbol Description gate (g) source (s) drain. |
| Part Number | SI2304DS Datasheet |
|---|---|
| Description | N-channel MOSFET |
| Manufacturer | Vishay |
| Overview |
N-Channel 30-V (D-S) MOSFET
Si2304DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
30
rDS(on) (W)
0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V
ID (A)
2.5 2.0
TO-236 (SOT-23)
G1 S2
3D
Top View Si2304DS (.
ocument Number: 70756 S-63633 *Rev. D, 01-Nov-99 Limit 100 166 Unit _C/W S FaxBack 408-970-5600 1 Si2304DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage. |