| Part Number | SI2305 Datasheet |
|---|---|
| Manufacturer | HAOHAI |
| Overview |
-3.9A,-20VP
P P-Channel Enhancement-Mode MOS FETs SMD
Features ■-20V, -3.9A, RDS(ON)=55mΩ @ VGS=-4.5V ■High dense cell design for extremely low RDS(ON) ■Rugged and reliable ■Lead free prod.
*-20V, -3.9A, RDS(ON)=55mΩ @ VGS=-4.5V *High dense cell design for extremely low RDS(ON) *Rugged and reliable *Lead free product is acquired *SOT-23 Package *Marking Code: A5 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 HPM2305 P-Channel MOSFETs HPM2305 P-Cha. |
SI2305 Datasheet and Specifications PDF
The SI2305 is a P-Channel MOSFET.
| Part Number | SI2305 Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Micro Commercial Components |
| Overview | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2305 • • • • • • • • Features Halogen fre. Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 TrenchFET Power MOSFET Load Switch for Portable Devices DC/DC Converter SOT-23 Package Marking Code: S5 P-Channel Enhancement Mode Field Effect Transistor SOT-23 A D M. |
| Part Number | SI2305 Datasheet |
|---|---|
| Description | p-Channel MOSFET |
| Manufacturer | Unknown Manufacturer |
| Overview |
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| Part Number | SI2305 Datasheet |
|---|---|
| Description | 20V P-Channel MOSFET |
| Manufacturer | HT Semi |
| Overview | SI2305 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench process technology High Density Cell Design F. Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0. |