-200V Datasheet | Specifications & PDF Download

www.vishay.com SQM90142E Vishay Siliconix Automotive N-Channel 200 V (D-S) 175 °C MOSFET TO-263 Top View S D G FEATURES • TrenchFET® power MOSFE

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SFA70UP20DN 70A, 200V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: trr=40ns • Typical Forward Voltage: VF=0.96V@ IF=35A • Reverse Voltage:

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DATA SHEET www.onsemi.com Intelligent Power Module (IPM) Inverter, 1200 V, 40 A NFAM5312SCBUT General Description The NFAM5312SCBUT is a fully−inte

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IRF630B/IRFS630B IRF630B/IRFS630B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produ

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Surface Mount Aluminum Electrolytic Capacitors FEATURES • CYLINDRICAL V-CHIP CONSTRUCTION FOR SURFACE MOUNTING • HIGH TEMPERATURE, EXTEND LIFE (5000 H

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YANGZHOU POSITIONING TECH. CO., LTD THYRISTOR-THYRISTOR MODULE MTC500A-4200V Feature ： Typical application： ● Chip and backplane electrical insula

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MITSUBISHI SEMICONDUCTORS M81019FP 1200V HIGH VOLTAGE HALF BRIDGE DRIVER DESCRIPTION M81019FP is high voltage Power MOSFET and IGBT gate driv

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LCG75PIS120E2B 1200V, 75A PIM Module Features  VCE(sat) with positive temperature coefficient  Low VCE(sat)  Low switching losses  High current ca

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SFR16S20T/F_Datasheet 16A, 200V SUPER-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR16S20T/F is a Super-Fast Recovery Diode, fabricated in advanced s

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X.PAK NSF017120T2A0 1200 V, 17 mΩ, N-channel SiC MOSFET 9 April 2025 Product data sheet 1. General description The NSF017120T2A0 is a Silicon Carbi

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SFR20U20PN_Datasheet 20A, 200V ULTRA-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR20U20PN is a Ultra-Fast Recovery Diode, fabricated in advanced si

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LME49811 www.ti.com SNAS394C – DECEMBER 2007 – REVISED APRIL 2013 LME49811 Audio Power Amplifier Series High Fidelity 200 Volt Power Amplifier Inpu

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Large Can Aluminum Electrolytic Capacitors FEATURES • LONG LIFE AT +105°C (5,000 HOURS) • HIGH RIPPLE CURRENT • HIGH VOLTAGE (UP TO 450VDC) • SUITABLE

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6EDL04 family 6EDL04x06xT and 6EDL04N02PR family 200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and I

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AP130N20MP 200V N-Channel Enhancement Mode MOSFET Description The AP130N20MP is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned

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1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 VCES = IC110 = VCE(sat)  tfi(typ) = 1

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GenX3TM 1200V IGBTs High Surge Current Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGA12N120A3 IXGP12N120A3 IXGH12N120A3 VCES = 1200V = 12A IC

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X.PAK NSF030120T2A0 1200 V, 30 mΩ, N-channel SiC MOSFET 24 March 2025 Product data sheet 1. General description The NSF030120T2A0 is a Silicon Carb

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