-200V Datasheet | Specifications & PDF Download

IMCQ120R053M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Q-DPAK top-side cooling Features • VDSS = 1200 V at Tvj =

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SFA70UP20DN 70A, 200V Ultrafast Dual Diode Features • Ultrafast Soft Recovery: trr=40ns • Typical Forward Voltage: VF=0.96V@ IF=35A • Reverse Voltage:

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SFR16S20T/F_Datasheet 16A, 200V SUPER-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR16S20T/F is a Super-Fast Recovery Diode, fabricated in advanced s

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630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the sel

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DATASHEET UF4SC120023B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 23 mohm Rev. B, January 2025 Description Ta

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www.DataSheet4U.com FGA15N120ANTD 1200V NPT Trench IGBT May 2006 FGA15N120ANTD 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive tem

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XS4202 ® XS4202 Pb Free Plating Product Pb 20Ampere,200Volt Insulated Fast Recovery Diode for Welding Machine APPLICATION · Freewheeling, Snubber

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SFR12S20T/F_Datasheet 12A, 200V SUPER-FAST RECOVERY RECTIFIER GENERAL DESCRIPTION SFR12S20T/F is a Super-Fast Recovery Diode, fabricated in advanced s

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70HF120/70HFR120 70HF120/70HFR120 Pb Pb Free Plating Product 70A/1200V Metal Stud Type Rectifier Diodes Unit:mm(inch) DO-203AB (DO-5) POLARITY

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PT5618 200V Three-Phase Gate Driver DESCRIPTION The PT5618 is a high speed power MOSFET and IGBT driver with three independent high and low side refe

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UNISONIC TECHNOLOGIES CO., LTD 30N20 30A, 200V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC’s advanc

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6EDL04 family 6EDL04x06xT and 6EDL04N02PR family 200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and I

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UNISONIC TECHNOLOGIES CO., LTD UTG40N120FQ-S Insulated Gate Bipolar Transistor 1200V TRENCH GATE FIELD-STOP IGBT  DESCRIPTION The UTC UTG40N120FQ

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SHINDENGEN Super Fast Recovery Rectifiers Dual S20LC20U 200V 20A FEATURES •œ Low noise •œ trr35ns •œ Small ƒÆ ƒÆjc jc •œ Dielectric strength 2kV guar

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IMZ120R060M1H IMZ120R060M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c

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Description AP100N20MP 200V N-Channel Enhancement Mode MOSFET The AP100N20MP uses advanced trench technology to provide excellent RDS(ON), low gate

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AIMZH120R040M1T CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET Features PG-TO247-4-STD-NT6.7 • VDSS = 1200 V

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630/F630/I630/E630/B630/D630 9A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs, is obtained by the sel

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Silan Microelectronics SVD640T/D/S_Datasheet 18A, 200V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD640T/D/S is an N-channel enhancement mode power MOS

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