-50V Datasheet | Specifications & PDF Download

Silan Microelectronics SD4938_Datasheet 150V CURRENT MODE PWM CONTROLLER DESCRIPTION SD4938 is a current mode PWM controller with 150V MOSFET used

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BSS138K 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 0.31A Description and Appl

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OSPF10N65C http://www.osen.net.cn 650V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Avalanche

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Public IGLT65R110B2 Preliminary datasheet CoolGaN™ BDS 650 V G5 CoolGaN™ Bidirectional switch, enhancement‑mode Infineon's CoolGaN™ Bi‑Directional Sw

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Silan Microelectronics SVF10N65T/F/K/S_Datasheet 10A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF10N65T/F/K/S is an N-channel enhancement mode po

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 A

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DTC114E series NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor) Datasheet Parameter VCC IC(MAX.) R1 R2 Value 50V 100mA 10kΩ 10k

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DSBG Device Solutions Business Group US18650VTC4 Tentative Technical Information Sony Energy Devices Corporation Department 1 Energy Division 1 1 Gen

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MBF15T65PEH 650V FieldStop Trench IGBT Datasheet MBF15T65PEH 650V Field Stop IGBT General Description Features This IGBT is produced using advance

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Silan Microelectronics SVSP14N65FJD/T/KD2_Datasheet 14A, 650V SUPER JUNCTION MOS POWER TRANSISTOR DESCRIPTION SVSP14N65FJD/T/KD2 is an N-channel en

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TO-247-3L NGW40T65M3DFP 650 V, 40 A trench field-stop IGBT with full rated silicon diode Rev. 1.1 — 28 February 2025 Product data sheet 1. Genera

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MSF10N65 650V N-Channel MOSFET Description The MSF10N65 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of f

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（） Product Specifications (Tentative) ： Customer’s name ： ： Customer’s parts name ： Customer’s parts number ソニー ： US18650VTC5A SONY par

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Large Can Aluminum Electrolytic Capacitors FEATURES • LONG LIFE AT +105°C (5,000 HOURS) • HIGH RIPPLE CURRENT • HIGH VOLTAGE (UP TO 450VDC) • SUITABLE

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Large Can Aluminum Electrolytic Capacitors FEATURES • LONG LIFE AT +105°C (5,000 HOURS) • HIGH RIPPLE CURRENT • HIGH VOLTAGE (UP TO 450VDC) • SUITABLE

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10A, 150V SCHOTTKY RECTIFIER GENERAL DESCRIPTION SBD10C150T/F is schottky rectifier fabricated in silicon epitaxial planar technology. Typical applica

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Features • High Performance, Low Power Atmel® AVR® 8-Bit Microcontroller • Advanced RISC Architecture – 130 Powerful Instructions – Most Single Clock

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