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AB-2003 DigiDice Socket 478 Mini PC System User’s Manual 4200-0382-24 Rev. 1.01 Copyright and Warranty Notice The information in this document is sub

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DDR2 SDRAM AVR201628 (128M X 16 ) AVR200856 (256M X 8 ) AVR200412 (512M X 4 ) Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • JEDEC-standard 1.8V

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DDR2 SDRAM AVR201628 (128M X 16 ) AVR200856 (256M X 8 ) AVR200412 (512M X 4 ) Features • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • JEDEC-standard 1.8V

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Features ◼ VIN Voltage: Support 2.5-V, 3.3-V and 5-V Power Rails ◼ VLDOIN Voltage Range: 1.1 V to 3.5 V ◼ Flexible Input Voltage Tracking Directly fro

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TPM2003 40-V 7-Ch Low-side Driver Array Features Description • 7-channel Darlington Array • 500-mA Rated Drain Current (Per Channel) • Very Low Out

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A-Data www.DataSheet4U.com ADECB1608 Revision History Revision 1 ( Dec. 2001 ) 1.Fister release. Revision 2 ( Apr. 2002 ) 1. Changed module current

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MOSFET 600V 200A IGBT Número de parte: GT30J127 Descripción: IGBT PARA APLICACIONES DE PANTALLAS DE TELEVISION DE PLASMA TO-220 Voltaje: 600V Corrient

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S-1200 Series www.ablicinc.com © ABLIC Inc., 2003-2015 HIGH RIPPLE-REJECTION LOW DROPOUT LOW INPUT-AND-OUTPUT CAPACITANCE CMOS VOLTAGE REGULATOR Rev

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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Tenergy Corporation 436 Kato Terrace Fremont CA 94539 Tel: 510-687-0388 Fax: 510-687-0328 TENERGY 18650 2200mAh Li-Ion Cell Product Name: Tenergy L

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Global LCD Panel Exchange Center www.panelook.com PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE DT AND SHALL NOT BEG REPRODUCED OR COPI

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TIGER Machine Translated by Google ELECTRONIC CO.,LTD Bipolar Circuit CS2003CP Seven-channel Darlington tube driver circuit 1. Overview CS2003CP i

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www.DataSheet4U.com RF Diodes 1series Fast recovery Diodes (Silicon Epitaxial Planar) RF 1 series zExternal dimensions (Unit : mm) CPD 1.5 5.5 2.3

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® WON-TOP ELECTRONICS SR5150 – SR5200 5.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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Translated from chinese by: Esquiloesperto (Messias-BH.) ATX 2005 POWER SUPPLY PWM SUPERVISOR Power Supply Pulse Width Modulation Integrated Circuit C

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CD2003GP/GB FM/AM RADIO IC 1、 Overvie w The CD2003GP/GB is a monolithic IC designed for use as a FM/AM radio system. Combined with audio power amplifi

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SPEC. NUMBER PROPRIETARY NOTE THIS SPECIFICATION IS THE PROPERTY OF BOE HF AND SHALL NOT BE REPRODUCED OR COPIED WITHOUT THE WRITTEN PERMISSION OF BO

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HFX7000-200 Fiber Optic Component 50 Mbps, 650 nm LED DESCRIPTION The HFX7000-200 is a 50 Mbps LED designed to meet data transmission requirements in

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isc Silicon NPN Power Transistor 2SC5200 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V

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