.
INCHANGE
3DD13009 - NPN Transistor
isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect.
Inchange Semiconductor
MJE13005D - TO-220C Silicon NPN Power Transistor
INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification MJE13005D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide.
INCHANGE
SF3006PT - Ultrafast Recovery Rectifier
Ultrafast Recovery Rectifier FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·Minimum Lot-to-Lot variations for robust de.
INCHANGE
FJP13009 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor FJP13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage :.
INCHANGE
IRFB3006 - N-Channel MOSFET
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3006， IIRFB3006 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.5mΩ ·Enhancement.
INCHANGE
2SK3003 - N-Channel MOSFET
isc N-Channel MOSFET Transistor 2SK3003 FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Re.
Inchange Semiconductor
MJE13007A - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor MJE13007A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage .
Inchange Semiconductor
MJE13009 - Silicon NPN Power Transistors
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ¡¤With TO-220C package ¡¤High voltage ,high speed APPLICATION.
INCHANGE
3DD13009K - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo.
INCHANGE
2SC3300 - NPN Transistor
isc Silicon NPN Power Transistor 2SC3300 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Low Collector Saturation Voltage- :.
INCHANGE
DMN3009SK3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 80A@ TC=25℃ ·Drain Source Voltage- : VDSS= 30V(Min) ·Static Drain-Source On-Resistance :.
Inchange Semiconductor
APT13005SU-G1 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor isc Product Specification APT13005SU-G1 DESCRIPTION · High Collector-Emitter Voltage : VCES= 700V(Min.) ·Fast Switc.
Rohm
NB3002-VA10A - High speed thermal printhead (300 dots / inch)
Printheads High speed thermal printhead (300 dots / inch) NB3002-VA10A The NB3002-VA10A is a flat thin-film thermal printhead capable of printing spe.
Inchange Semiconductor
MJE13003A - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor MJE13003A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage .
Inchange Semiconductor
MJE13005F - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturat.
Inchange Semiconductor
MJE13005 - Silicon NPN Power Transistors
isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) .
Micron
MTFDDACxxxSAL1x1 - P300 2.5-Inch SATA NAND Flash SSD
P300 2.5-Inch NAND Flash SSD Features P300 2.5-Inch SATA NAND Flash SSD MTFDDACxxxSAL1x1 Features • Micron® SLC NAND Flash • RoHS-compliant package •.
Micron
MTFDDAC050SAL-1N1AA - P300 2.5-Inch SATA NAND Flash SSD
P300 2.5-Inch NAND Flash SSD Features P300 2.5-Inch SATA NAND Flash SSD MTFDDACxxxSAL1x1 Features • Micron® SLC NAND Flash • RoHS-compliant package •.
