0.300-INCH Datasheet | Specifications & PDF Download

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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LightKey Datasheet of 3.00 inch 5x7 Dot Matrix LED Display LM30057A/B Series – 3.00 inch 5x7 Dot Matrix LED Display ATTENTION OBSERVE PRECAUTIONS F

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification MJE13005D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide

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isc Silicon PNP Power Transistor INCHANGE Semiconductor NSS1C300E DESCRIPTION ·With TO-252(DPAK) packaging ·Large collector current ·Low collector s

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isc Silicon NPN Power Transistor MJE13003A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat)

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isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

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isc N-Channel MOSFET Transistor IRFP3006，IIRFP3006 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.5mΩ ·Enhancement mode: ·100% avalanche t

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isc Silicon NPN Power Transistor MJE13007A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage

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ADVANCED PRESSURE TECHNOLOGY Series AP 30, 35 & 36 1/4 INCH DIAPHRAGM VALVE Springless – manual and pneumatic (NC & NO) Engineering Data — Series AP

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12.6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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isc N-Channel MOSFET Transistor 2SK3003 FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Re

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NF3004-VA20A Printheads Hight Speed Thermal Printhead (300DPI ; dots / inch) NF3004-VA20A The NF3004-VA20A is a flat thin film thermal printhead that

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isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain hFE = 1000 (Min) @ IC = 5A ·Col

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage: VCE(sat) =

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isc N-Channel MOSFET Transistor IXTP300N04T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.5mΩ@VGS=10V ·Fully characterized avalanche vo

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Isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variatio

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Printheads Near edge thermal printhead (300 dots / inch) NE3002-VA10A The NE3002-VA10A is a near edge thin-film thermal printhead, where the printing

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