0.300-INCH Datasheet | Pinout, Features, Price Comparison & PDF

isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

LightKey Datasheet of 3.00 inch 5x7 Dot Matrix LED Display LM30057A/B Series – 3.00 inch 5x7 Dot Matrix LED Display ATTENTION OBSERVE PRECAUTIONS F

INCHANGE Semiconductor Silicon NPN Power Transistor Product Specification MJE13005D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide

isc N-Channel MOSFET Transistor IRFP3006，IIRFP3006 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.5mΩ ·Enhancement mode: ·100% avalanche t

isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

isc Silicon NPN Power Transistor MJE13003A DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage

isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRFB3006， IIRFB3006 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤2.5mΩ ·Enhancement

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤12.6mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche

isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

isc Silicon NPN Power Transistor DESCRIPTION ·High breakdown voltage ·High switching speed ·High current capability ·Minimum Lot-to-Lot variations fo

Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

Schottky Barrier Rectifier MBR30300PT FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High

LightKey Datasheet of 3.00 inch 5x7 Dot Matrix LED Display LM30057A/B Series – 3.00 inch 5x7 Dot Matrix LED Display ATTENTION OBSERVE PRECAUTIONS F

Schottky Barrier Rectifier INCHANGE Semiconductor MBR20300CT FEATURES ·Metal silicon junction, majority carrier conduction ·Low leakage current, low

Schottky Barrier Rectifier INCHANGE Semiconductor MBR20300C FEATURES ·Low leakage current ·Low forword voltage ·High surge current capability ·Low s

Series SIDACtor Devices Compak TwinCHIP™ SIDACtor® Device RoHS The modified DO-214AA SIDACtor devices provide low-cost, longitudinal protection. 1