.
INCHANGE
BDW47 - PNP Transistor
isc Silicon PNP Darlington Power Transistor BDW47 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Current Gain :.
INCHANGE
IRFB4710 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRFB4710，IIRFB4710 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.014Ω ·Enhancement mode ·Fast Switching S.
Inchange Semiconductor
2SK447 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor 2SK447 FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Res.
INCHANGE
IRFP4768 - N-Channel MOSFET
isc N-Channel MOSFET Transistor IRFP4768，IIRFP4768 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤17.5mΩ ·Enhancement mode: ·100% avalanche t.
Inchange Semiconductor
TIP147T - Silicon PNP Darlington Power Transistor
isc Silicon PNP Darlington Power Transistor INCHANGE Semiconductor TIP147T DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-.
INCHANGE
2SC4793 - NPN Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·High Current-Gain Bandwidth Product ·Comple.
INCHANGE
2SD1047 - NPN Transistor
isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·High Curren.
INCHANGE
FDP047N10 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FDP047N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance: .
ON Semiconductor
AR0147 - 1/4-Inch CMOS Digital Image Sensor
AR0147 Advance Information 1/4-Inch CMOS Digital Image Sensor General Description ON Semiconductor AR0147AT is a 1/4−inch CMOS digital image sensor .
Inchange Semiconductor
IRF470 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF470 DESCRIPTION ·Repetitive Avalanche Ratings ·Dynamic dv/dt Rat.
Inchange Semiconductor
2SK2475 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lo.
Inchange Semiconductor
2SD476N - Silicon NPN Power Transistor
isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC=2A ·Collector-Emitter Breakdown Voltage- : .
INCHANGE
C3747 - Silicon NPN Power Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3747 DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·.
INCHANGE
BF471 - NPN Transistor
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BF469/BF471 DESCRIPTION ·NPN transistors in a to-126 package ·PNP .
INCHANGE
BUV47 - NPN Transistor
isc Silicon NPN Power Transistor BUV47 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min.) ·Collector-Emitter Saturation Volt.
INCHANGE
2SD1047E - NPN Transistor
isc Silicon NPN Power Transistor isc Product Specification 2SD1047E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Li.
INCHANGE
R6047ENZ1 - N-Channel MOSFET
isc N-Channel MOSFET Transistor R6047ENZ1 FEATURES ·Drain Current –ID= 47A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-.
Inchange Semiconductor
IRFP247 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFP247 FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Volt.
Inchange Semiconductor
IRF647 - N-Channel Mosfet Transistor
INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification IRF647 ·FEATURES ·Avalanche Rugged Technology ·Rugged Gate Oxide Te.
Inchange Semiconductor
BD947 - Silicon NPN Power Transistor
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 85(Min)@ IC= 500mA ·Complement to Type BD944/946/948 ·Minimum Lot-to-Lot variat.
