0.47-Inch Datasheet | Specifications & PDF Download

isc Silicon NPN Plastic-Encapsulate Transistors BC847 DESCRIPTION ·DC Current Gain- : hFE=110-800 @IC= 2mA ·Collector-Emitter Breakdown Voltage- : V

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1.88 INCH (47.7 mm) 8 X 8 DOT MATRIX STICK DISPLAY DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO AN

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Green Gap· Yellow Super GaAsP Amber Super GaAsP O.S-Inch 7-Segment LED Displays Optoelectronic Products General Description The FND530 and FND537 are

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMW47N60S1HF ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switchin

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isc Silicon NPN Power Transistor 2SC3047 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Re

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isc Silicon NPN Power Transistor BDY47 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V(Min.) ·DC Current Gain- : hFE=20(Min.)@IC

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4796 DESCRIPTION ·High Breakdown Voltage- : V(BR)CBO= 1700V(Min) ·High Switching Speed ·H

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isc N-Channel MOSFET Transistor 2SK3479-ZJ FEATURES ·Drain Current : ID= 83A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On

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AR0147 Advance Information 1/4-Inch CMOS Digital Image Sensor General Description ON Semiconductor AR0147AT is a 1/4−inch CMOS digital image sensor

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N1470 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitt

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www.DataSheet4U.net Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA747A DESCRIPTION ·With TO-3 package ·Wide area

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isc Silicon PNP Power Transistor 2SA747 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CE

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isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·High Curren

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isc Silicon NPN Power Transistor BUV47A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min.) ·Collector-Emitter Saturation Vol

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Isc N-Channel MOSFET Transistor IRFS4710 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·10

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isc N-Channel MOSFET Transistor AOD476 FEATURES ·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS=20V(Min) ·Static Drain-Source On-Resis

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isc N-Channel MOSFET Transistor R6047MNZ1 FEATURES ·Drain Current –ID= 47A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-

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DLP471TE DLPS170C – SEPTEMBER 2020 – REVISED JANUARY 2025 DLP471TE 0.47-Inch 4K UHD Digital Micromirror Device 1 Features • 0.47-inch diagonal microm

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