0.47-Inch Datasheet | Specifications & PDF Download

AR0147 Advance Information 1/4-Inch CMOS Digital Image Sensor General Description ON Semiconductor AR0147AT is a 1/4−inch CMOS digital image sensor

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isc N-Channel MOSFET Transistor IRFP4768，IIRFP4768 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤17.5mΩ ·Enhancement mode: ·100% avalanche t

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 230V(Min) ·High Current-Gain Bandwidth Product ·Comple

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF470 DESCRIPTION ·Repetitive Avalanche Ratings ·Dynamic dv/dt Rat

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isc Silicon PNP Power Transistor 2SA747 DESCRIPTION ·High Power Dissipation- : PC= 100W(Max.)@TC=25℃ ·Collector-Emitter Breakdown Voltage- : V(BR)CE

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD347 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emit

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VC

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isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 85(Min)@ IC= 500mA ·Complement to Type BD944/946/948 ·Minimum Lot-to-Lot variat

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isc N-Channel MOSFET Transistor 2SK2147-01 DESCRIPTION ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification BF470/BF472 DESCRIPTION ·PNP transistors in a to-126 package ·NPN

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isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·High Curren

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INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD473 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·

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isc N-Channel MOSFET Transistor 2SK3747 FEATURES ·Drain Current : ID= 2.0A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·Static Drain-Source On-

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3747 DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD347 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector

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isc N-Channel MOSFET Transistor IRFB4710，IIRFB4710 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.014Ω ·Enhancement mode ·Fast Switching S

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Isc N-Channel MOSFET Transistor ·FEATURES ·With To-262 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche test

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isc N-Channel MOSFET Transistor 2SK447 FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 250V(Min) ·Static Drain-Source On-Res

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isc Silicon NPN Power Transistor BUX47AFI DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) ·Fast Switching Speed ·Minimum

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isc Silicon NPN Power Transistor BD943F/945F/947F DESCRIPTION ·DC Current Gain- : hFE= 85(Min)@ IC= 500mA ·Complement to Type BD944F/946F/948F ·Mini

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