0.47-Inch Datasheet | Specifications & PDF Download

AR0147 Advance Information 1/4-Inch CMOS Digital Image Sensor General Description ON Semiconductor AR0147AT is a 1/4−inch CMOS digital image sensor

(82 views)

DLP471TE DLPS170C – SEPTEMBER 2020 – REVISED JANUARY 2025 DLP471TE 0.47-Inch 4K UHD Digital Micromirror Device 1 Features • 0.47-inch diagonal microm

(66 views)

isc N-Channel MOSFET Transistor IRFP4768，IIRFP4768 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤17.5mΩ ·Enhancement mode: ·100% avalanche t

(49 views)

isc Silicon NPN Power Transistor 2SD1047 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Linearity of hFE ·High Curren

(31 views)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRF470 DESCRIPTION ·Repetitive Avalanche Ratings ·Dynamic dv/dt Rat

(28 views)

isc N-Channel MOSFET Transistor INCHANGE Semiconductor FMW47N60S1HF ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switchin

(26 views)

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD347 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector-Emit

(26 views)

isc N-Channel MOSFET Transistor IRFB4710，IIRFB4710 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.014Ω ·Enhancement mode ·Fast Switching S

(25 views)

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SC3747 DESCRIPTION ·Good Linearity of hFE ·High Switching Speed ·

(24 views)

isc Silicon NPN Power Transistor isc Product Specification 2SD1047E DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Good Li

(23 views)

isc Silicon PNP Power Transistor 2SA473 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -30V(Min) ·Good Linearity of hFE ·Complement to

(21 views)

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification BF470/BF472 DESCRIPTION ·PNP transistors in a to-126 package ·NPN

(21 views)

isc Silicon PNP Darlington Power Transistor BDW47 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -100V(Min) ·High DC Current Gain :

(21 views)

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4758 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·

(18 views)

(17 views)

isc Silicon NPN Plastic-Encapsulate Transistors BC847 DESCRIPTION ·DC Current Gain- : hFE=110-800 @IC= 2mA ·Collector-Emitter Breakdown Voltage- : V

(17 views)

isc Silicon NPN Power Transistor BUX47A DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min) ·Fast Switching Speed ·Minimum Lo

(17 views)

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB547 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V (Min) ·Collector

(17 views)

isc N-Channel MOSFET Transistor FDP047N10 ·FEATURES ·With TO-220 packaging ·Drain Source Voltage- : VDSS ≥ 100V ·Static drain-source on-resistance:

(17 views)

1.88 INCH (47.7 mm) 8 X 8 DOT MATRIX STICK DISPLAY DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO AN

(16 views)